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Attention Score in Context
| Title |
Gated twin-bit silicon–oxide–nitride–oxide–silicon NAND flash memory for high-density nonvolatile memory
|
|---|---|
| Published in |
Japanese Journal of Applied Physics, May 2015
|
| DOI | 10.7567/jjap.54.064201 |
| Authors |
Yoon Kim, Won Bo Shim, Byung-Gook Park |
Attention Score in Context
This research output has an Altmetric Attention Score of 3. This is our high-level measure of the quality and quantity of online attention that it has received. This Attention Score, as well as the ranking and number of research outputs shown below, was calculated when the research output was last mentioned on 08 November 2019.
All research outputs
#7,610,760
of 23,205,257 outputs
Outputs from Japanese Journal of Applied Physics
#1,232
of 6,402 outputs
Outputs of similar age
#91,512
of 267,530 outputs
Outputs of similar age from Japanese Journal of Applied Physics
#2
of 15 outputs
Altmetric has tracked 23,205,257 research outputs across all sources so far. This one is in the 44th percentile – i.e., 44% of other outputs scored the same or lower than it.
So far Altmetric has tracked 6,402 research outputs from this source. They receive a mean Attention Score of 3.7. This one is in the 9th percentile – i.e., 9% of its peers scored the same or lower than it.
Older research outputs will score higher simply because they've had more time to accumulate mentions. To account for age we can compare this Altmetric Attention Score to the 267,530 tracked outputs that were published within six weeks on either side of this one in any source. This one has gotten more attention than average, scoring higher than 56% of its contemporaries.
We're also able to compare this research output to 15 others from the same source and published within six weeks on either side of this one. This one has gotten more attention than average, scoring higher than 53% of its contemporaries.