Proceedings of the Third International Conference on Trends in Information, Telecommunication and…
Springer New York
Chapter title |
Effect of Temperature on Si-Ge Hetero-Gate Raised Buried Oxide Drain Tunnel FET Electrical Parameters
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Chapter number | 31 |
Book title |
Proceedings of the Third International Conference on Trends in Information, Telecommunication and Computing
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Published by |
Springer, New York, NY, January 2013
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DOI | 10.1007/978-1-4614-3363-7_31 |
Book ISBNs |
978-1-4614-3362-0, 978-1-4614-3363-7
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Authors |
Monalisa das, Brinda Bhowmick |