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RT @FrontNeurosci: New Research: Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device…
RT @FrontNeurosci: New Research: Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device…
New Research: Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns: With the arrival of the Internet of Things (IoT) and… https://t.co/Ko