p-Si Device

Overview of attention for article published in Frontiers in Materials, October 2021

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New Research: Enhanced Spin Accumulation in Semiconductor at Room Temperature Using Ni0.65Zn0.35Fe2O4(NZFO) as Spin Injector in NZFO/MgO/p-Si Device: In this article, the fabrication of a Ni0.65Zn0.35Fe2O4/MgO/p-Si heterostructure… https://t.co/fLOsw9qQaG

01 Oct 2021

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