Formation and Effect of Deposited Thin TiO2 Layer With Compressive Strain and Oxygen Vacancies on GaAs (001) Substrate

Overview of attention for article published in Frontiers in Materials, April 2022

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New Research: Formation and Effect of Deposited Thin TiO2 Layer With Compressive Strain and Oxygen Vacancies on GaAs (001) Substrate: The integration of metal oxides and GaAs semiconductors is quite attractive for its potential… https://t.co/z5V53KsQrD #Ma

28 Apr 2022

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