Open Access UCL Research: Engineering Silicon Oxide by Argon Ion Implantation for High Performance Resistance Switching https://t.co/N2qL1OMxeN
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RT @Prof_Kenyon: Out now in @FrontiersIn. How to optimise resistance switching in oxide RRAM/memristors? It's all about the microstructure:…
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RT @Prof_Kenyon: Out now in @FrontiersIn. How to optimise resistance switching in oxide RRAM/memristors? It's all about the microstructure:…
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New Research: Engineering Silicon Oxide by Argon Ion Implantation for High Performance Resistance Switching: We report that implanting argon ions into a film of uniform atomic layer deposition (ALD)-grown SiOx enables electroforming and… https://t.co/H428g