Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices

Overview of attention for article published in Frontiers in Materials, September 2022

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New Research: Influence of doubly-hydrogenated oxygen vacancy on the TID effect of MOS devices: The total ionizing dose (TID) effect is one of the main causes of the performance degradation/failure of semiconductor devices under… https://t.co/CWXiygnec2 #M

28 Sep 2022

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