Kinetic influences on void formation in epitaxially regrown GaAs-Based PCSELs

Overview of attention for article published in Journal of Crystal Growth, January 2023

Altmetric Badge

About this Attention Score

Above-average Attention Score compared to outputs of the same age (53rd percentile)
Good Attention Score compared to outputs of the same age and source (75th percentile)

Mentioned by

twitter: 2 X users

Citations

dimensions_citation: 5 Dimensions

Readers on

mendeley: 5 Mendeley

Summary X Dimensions citations

So far, Altmetric has seen 3 X posts from 2 X users, with an upper bound of 726 followers.

If you want to learn more about how we regrew these devices, and how we can engineer the voids that form in PCSELs, check out my paper from last year in JCG! https://t.co/HHaH5fE8Ht

29 May 2024

Reply Repost Favourite

RT @A_F_McKenzie: New paper out today in Journal of Crystal Growth! We use a combo of MOVPE and STEM to control void formation during regr…

28 Nov 2022

Reply Repost Favourite

New paper out today in Journal of Crystal Growth! We use a combo of MOVPE and STEM to control void formation during regrowth of PCSELs and to understand why the voids look the way they do. Second paper to come out of my PhD... and it's open access too!

28 Nov 2022

Reply Repost Favourite

This page shows the most recent X posts that mention this research output.

Click here to find out how to access more activity.