RT @Underfox3: Researchers have presented a TCAD simulation of Phase-Change Memory + OTS Selector Device against experimental data, showing…
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Researchers have presented a TCAD simulation of Phase-Change Memory + OTS Selector Device against experimental data, showing the qualitative behavior of a simulated OTS device in isolation and in the PCM + OTS device within the confines of GTS framework.
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[2211.06084] M. Thesberg, Z. Stanojevic, O. Baumgartner et al.: Monolithic TCAD Simulation of Phase-Change Memory (PCM/PRAM) + Ovonic Threshold Switch (OTS) Selector Device https://t.co/xtdHCURllK https://t.co/geX1K8YNoI #cond_mat_mes_hall