P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

Overview of attention for article published in Japanese Journal of Applied Physics, December 1989

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In the top 5% of all research outputs scored by Altmetric
Among the highest-scoring outputs from this source (#14 of 6,736)
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news: 1 news outlet
blogs: 2 blogs
twitter: 12 X users

patent: 6 patents
facebook: 1 Facebook page
wikipedia: 14 Wikipedia pages

Citations

dimensions_citation: 1779 Dimensions

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mendeley: 657 Mendeley

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So far, Altmetric has seen 6 patents that reference this research output.

Bonding pad for gallium nitride-based light-emitting devices

Grant US-7122841-B2

United States of America

Bonding pad for gallium nitride-based light-emitting device

Grant US-7002180-B2

United States of America

Method for reducing the resistivity of p-type II-VI and III-V semiconductors

Grant US-6911079-B2

United States of America

Efficient light emitting diodes and lasers

Grant US-6881983-B2

United States of America

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