Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Overview of attention for article published in Japanese Journal of Applied Physics, July 1997

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patent: 4 patents

Citations

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mendeley: 138 Mendeley

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So far, Altmetric has seen 4 patents that reference this research output.

LIGHT-EMITTING DEVICE

Application EP-1571716-A4

European Patent Office

Semiconductor device and method of its manufacture

Application EP-1928012-A2

European Patent Office

LIGHT-EMITTING DEVICE

Application EP-1571716-A1

European Patent Office

GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME

Application WO-1999023693-A1

World Intellectual Property Organisation (WIPO)

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