TiN/TiSi2 Formation Using TiNx Layer and Its Feasibilities in ULSI

Overview of attention for article published in Japanese Journal of Applied Physics, February 1995

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So far, Altmetric has seen 28 patents that reference this research output.

Methods for depositing nickel films and for making nickel silicide and nickel germanide

Grant US-10553440-B2

United States of America

Methods of forming metal silicides

Grant US-10199234-B2

United States of America

Metal silicide, metal germanide, methods for making the same

Grant US-10043880-B2

United States of America

Doped metal germanide and methods for making the same

Grant US-9634106-B2

United States of America

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