Mechanisms of Oxygen Vacancy Aggregation in SiO2 and HfO2

Overview of attention for article published in Frontiers in Physics, March 2019

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Just like MRAM, gate oxide (SiO2 or HfO2) is an example of tunnel oxide ready to become RRAM under stress. https://t.co/gs6O85llxp

03 Mar 2023

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The 2019 Editor’s Choice article for Physical Chemistry and Chemical Physics from researchers at @UCL @NTNUnorway @Uni_MR proposes a new mechanism of vacancy aggregation which could reduce degradation in electronic devices #dielectric #oxides #openaccess

04 Aug 2020

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#Mechanisms of #Oxygen #Vacancy #Aggregation in #SiO2 and #HfO2 https://t.co/0jCjjf7OQZ

29 Mar 2019

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Mechanisms of Oxygen Vacancy Aggregation in SiO2 and HfO2 https://t.co/eaCm1ru8e2

29 Mar 2019

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