Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress

Overview of attention for article published in Frontiers in Physics, March 2020

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Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress https://t.co/ushQ8j2q2s #Physics

06 Mar 2020

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