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Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress

Overview of attention for article published in Frontiers in Physics, March 2020
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Title
Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress
Published in
Frontiers in Physics, March 2020
DOI 10.3389/fphy.2020.00051
Authors

Haiou Li, Kangchun Qu, Xi Gao, Yue Li, Yonghe Chen, Zhiping Zhou, Lei Ma, Fabi Zhang, Xiaowen Zhang, Tao Fu, Xingpeng Liu, Yingbo Liu, Tangyou Sun, Honggang Liu

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Attention Score in Context

Attention Score in Context

This research output has an Altmetric Attention Score of 1. This is our high-level measure of the quality and quantity of online attention that it has received. This Attention Score, as well as the ranking and number of research outputs shown below, was calculated when the research output was last mentioned on 06 March 2020.
All research outputs
#20,608,970
of 23,197,711 outputs
Outputs from Frontiers in Physics
#1,648
of 3,644 outputs
Outputs of similar age
#308,120
of 362,402 outputs
Outputs of similar age from Frontiers in Physics
#61
of 116 outputs
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So far Altmetric has tracked 3,644 research outputs from this source. They receive a mean Attention Score of 2.5. This one is in the 1st percentile – i.e., 1% of its peers scored the same or lower than it.
Older research outputs will score higher simply because they've had more time to accumulate mentions. To account for age we can compare this Altmetric Attention Score to the 362,402 tracked outputs that were published within six weeks on either side of this one in any source. This one is in the 1st percentile – i.e., 1% of its contemporaries scored the same or lower than it.
We're also able to compare this research output to 116 others from the same source and published within six weeks on either side of this one. This one is in the 1st percentile – i.e., 1% of its contemporaries scored the same or lower than it.